Thermal stability of tantalum nitride diffusion barriers for Cu metallization formed using plasma immersion ion implantation.

Kumar, Mukesh and Kumar, Raj and Kumar, Dinesh and Paul, A.K. (2005) Thermal stability of tantalum nitride diffusion barriers for Cu metallization formed using plasma immersion ion implantation. Microelectronic Engineering, 82 (1). pp. 53-59. ISSN 0167-9317

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Official URL: http://www.sciencedirect.com/science/article/pii/S...

Abstract

Plasma immersion ion implantation (PIII) technique was employed to form Tantalum nitride diffusion barrier films for copper metallization on silicon. Tantalum coated silicon wafers were implanted with nitrogen at two different doses. A copper layer was deposited on the samples to produce Cu/Ta(N)/Si structure. Samples were heated at various temperatures in nitrogen ambient. Effect of nitrogen dose on the properties of the barrier metal was investigated by sheet resistance, X-ray diffraction and scanning electron microscopy measurements. High dose nitrogen implanted tantalum layer was found to inhibit the diffusion of copper up to 700 °C.

Item Type: Article
Uncontrolled Keywords: Diffusion barrier; Copper metallization; Plasma immersion ion implantation; Thermal stability; Tantalum; SEM; XRD
Subjects: CSIO > Applied Physics
Depositing User: Ms. J Shrivastav
Date Deposited: 03 Apr 2012 15:56
Last Modified: 03 Apr 2012 15:56
URI: http://csioir.csio.res.in/id/eprint/24

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