Voltammetric Determination of Fluoride Ion Using Galvanostaticaly Grown Poly(3-hexylthiophene) Film

Aggarwal, Prerna and Singh, Suman and Awasthi, Sajeela and Srivastava, Alok and Singla, M.L. (2012) Voltammetric Determination of Fluoride Ion Using Galvanostaticaly Grown Poly(3-hexylthiophene) Film. Sensors & Transducers Journal, 137 (2). pp. 85-94. ISSN 1726-5479

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Official URL: http://www.sensorsportal.com/HTML/DIGEST/P_926.htm

Abstract

Poly (3-hexylthiohene) films have been prepared by galvanostatic technique on platinum surface. The structure and surface morphology of the film was characterized by cyclic voltammetry (CV), FTIR and SEM imaging. Cyclic voltamogram of poly (3-HTh) film showed only one reduction peak at potential 0.82 V. Cyclic voltammogram of the poly (3-HTh) film when recorded in fluoride ion solution showed two redox pair at E1/2 = 0.048 V (A/A’) and E­1/2= 0.074 V (B/B’). The former peak may be attributed to [BF4]-/[BF4]2- redox couple and later peak to the presence of loosely bound fluoro-borate anions in the polymeric film respectively. Diffusion controlled process may be the possible reaction mechanism. The diffusion coefficient (D) and rate of reaction (R) for the reaction (B/B’) are calculated as 9.29 ´10-3 cm2 s-1 and 5.61 ´ 10-9 mol s-1 respectively. Poly (3-HTh) films showed detection limit as low as 2.5 mM.

Item Type: Article
Uncontrolled Keywords: Polythiophene, Fluoride estimation, Galvanostatic technique, Cyclic voltammetry
Subjects: CSIO > Chemistry
Depositing User: Ms. J Shrivastav
Date Deposited: 22 Apr 2012 23:03
Last Modified: 22 Apr 2012 23:03
URI: http://csioir.csio.res.in/id/eprint/254

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