Ultrafast Carrier dynamics of InxGa1-xN nanostructures grown directly on Si(111)

Kumar, Praveen and Devi, Pooja and Rodriguez, P.E.D.S. and Kumar, Manish and Shivling, V.D. and Noetzel, Richard and Sharma, Chhavi and Sinha, R.K. and Kumar, Mahesh (2018) Ultrafast Carrier dynamics of InxGa1-xN nanostructures grown directly on Si(111). Optical Materials, 79. pp. 475-479. ISSN 0925-3467

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Official URL: https://www.sciencedirect.com/science/article/pii/...


We show a flux dependence changes in structural, optical and electronic properties of InxGa1-xN nanostructures (NSs) namely nanocolumns (NCs), nanoflakes (NFs) and nanowall network (NWN) grown directly on Si(111) surface. Field emission scanning electron microscopy (FESEM) images were recorded to see morphological changes from NFs to NCs and NWNc etc, while high-resolution X-ray diffraction (HRXRD) ω−2θ scans were used to determine In incorporation. The maximum In incorporation was observed to be 20, 33 and 38% for the sharp transition from NFs to NCs and NWNs, respectively. The charge carrier dynamics of these grown NSs were probed using Ultrafast Femtosecond Transient Absorption Spectroscopy (UFTAS) with excitation at 350 nm pump wavelength. The UFTAS studies show the comparative charge carriers dynamics of the NWS, NCs and NFs. The charge carrier studies show a higher lifetime in NWNs as compare to NCs and NFs. Further, to examine electronic structure and level of degeneracy of these NSs, core-level and valence band spectra were analyzed by X-ray photoelectron spectroscopy (XPS), which manifest the upward band bending ranging from 0.2 eV to 0.4 eV.

Item Type: Article
Uncontrolled Keywords: InGaN; NSs; Si(111); UFS; XPS
Subjects: CSIO > Nano Science and Nano Technology
Divisions: Agri - Instrumentation
Depositing User: Ms. Jyotsana
Date Deposited: 06 Aug 2018 17:24
Last Modified: 06 Aug 2018 17:24
URI: http://csioir.csio.res.in/id/eprint/716

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