Enhancing linearity in I–V characteristics by B/N doping in graphene for communication devices

Sharma, Preetika and Singh, Sukhbir and Gupta, Shuchi and Kaur, Inderpreet (2017) Enhancing linearity in I–V characteristics by B/N doping in graphene for communication devices. Journal of Materials Science: Materials in Electronics, 28 (11). pp. 7668-7676. ISSN 0957-4522 (Print) 1573-482X (Online)

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Official URL: https://link.springer.com/article/10.1007/s10854-0...


To explore communication applications, a study towards achieving linearity in the I–V characteristics through increasing concentrations of Boron (B) / Nitrogen (N) doping on pristine graphene sheet is investigated. Individual B/N doping of 6.25, 12.50, 18.75 and 25% has been done in the same sub lattice using Density Functional Theory (DFT) along with Non Equilibrium Greens Function (NEGF) calculations. The modification in the electronic and transport properties of graphene sheet are also investigated. In comparison to the variation of band gap from 0.35 to 1.183 eV and 0.36 to 1.149 eV for B and N respectively, an insignificant variation in effective mass is reported. Apart from linearity, variation in conductance in doped structures is seen. B doping increases conductivity and yields ON current of 610 µA while N doping gives ON current of 310 µA for maximum doping concentrations. In this work, the sustained carrier mobility and high gain linear characteristics of doped graphene obtained will help to utilise a graphene channel for different communication device applications.

Item Type: Article
Uncontrolled Keywords: Effective Mass; Graphene Sheet; Dirac Point; Pristine Graphene; Fermi Level Shift
Subjects: CSIO > Microelectronics
Divisions: Nano Science and Nano Technology
Depositing User: Ms. Jyotsana
Date Deposited: 23 Jan 2019 16:37
Last Modified: 23 Jan 2019 16:37
URI: http://csioir.csio.res.in/id/eprint/744

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