Preventive Maintenance of Molecular Beam Epitaxy (MBE) Machine for the Growth of III-V Compound Semiconductors

Ghanshyam, C. and Singh, Satinder and Mishra, Sunita (2007) Preventive Maintenance of Molecular Beam Epitaxy (MBE) Machine for the Growth of III-V Compound Semiconductors. IETE Technical Review , 24 (6). pp. 459-462. ISSN 0256-4602

[img] PDF
Preventive maintenance of molecular beam IETETechRev246459-2081159_003441.pdf
Restricted to Registered users only

Download (118Kb)
Official URL: http://tr.ietejournals.org/article.asp?issn=0256-4...

Abstract

Molecular Beam Epitaxy (MBE) is a technique for growing epitaxial films by directing beams of atoms or molecules created by thermal evaporation onto a clean heated substrate under Ultra High Vacuum (UHV) conditions. Although the process appears to be simple, MBE machines are quite complex. The maintenance requirements are arduous and toilsome. Several practical problems have to be addressed in order to consistently maintain the UHV required for depositing low defect and high quality epilayers. Because of the accurate control and precise repeatability of doping and thickness required to produce epilayers for device applications, machine performance over a period of time must be maintained. This paper highlights the problems and issues being faced for proper maintenance of Molecular Beam Epitaxy Systems

Item Type: Article
Subjects: CSIO > Microelectronics
Depositing User: Ms. J Shrivastav
Date Deposited: 04 Apr 2012 15:55
Last Modified: 04 Apr 2012 15:55
URI: http://csioir.csio.res.in/id/eprint/77

Actions (login required)

View Item View Item